Silikoni Carbide SiC

Apejuwe

Silikoni Carbide Wafer SiC, jẹ lile pupọju, iṣelọpọ ti iṣelọpọ sintetiki ti ohun alumọni ati erogba nipasẹ ọna MOCVD, ati awọn ifihanAafo ẹgbẹ alailẹgbẹ alailẹgbẹ rẹ ati awọn abuda ọjo miiran ti olusọdipúpọ kekere ti imugboroosi igbona, iwọn otutu ti o ga julọ, itusilẹ ooru ti o dara, iyipada kekere ati awọn adanu idari, agbara diẹ sii, adaṣe igbona giga ati agbara fifọ aaye ina to lagbara, ati awọn ṣiṣan ogidi diẹ sii. ipo.Silicon Carbide SiC ni Western Minmetals (SC) Corporation ni a le pese ni iwọn 2 ″ 3' 4“ ati 6 ″ (50mm, 75mm, 100mm, 150mm) iwọn ila opin, pẹlu iru n-iru, idabobo ologbele tabi wafer idinwon fun ile-iṣẹ ati awọn ohun elo yàrá.Eyikeyi ti a ṣe adani jẹ fun ojutu pipe si awọn onibara wa ni agbaye.

Awọn ohun elo

Didara to gaju 4H / 6H Silicon Carbide SiC wafer jẹ pipe fun iṣelọpọ ti ọpọlọpọ gige-eti ti o ga julọ ni iyara, iwọn otutu giga & awọn ẹrọ itanna foliteji bii Schottky diodes & SBD, iyipada agbara giga MOSFETs & JFETs, bbl O jẹ tun jẹ ohun elo ti o nifẹ ninu iwadii & idagbasoke ti awọn transistors bipolar bipolar ẹnu-ọna idabobo ati awọn thyristors.Gẹgẹbi ohun elo semiconducting iran tuntun ti o lapẹẹrẹ, Silicon Carbide SiC wafer tun ṣe iranṣẹ bi itankale ooru to munadoko ni awọn paati LED agbara giga, tabi bi iduroṣinṣin ati sobusitireti olokiki fun dagba Layer GaN ni ojurere ti iṣawari imọ-jinlẹ ti ìfọkànsí ọjọ iwaju.

Ibeere ni bayi

Awọn alaye

Awọn afi

Imọ Specification

Silikoni Carbide SiC

Silikoni Carbide SiCni Western Minmetals (SC) Corporation le ti wa ni pese ni iwọn 2″ 3' 4" ati 6" (50mm, 75mm, 100mm, 150mm) opin, pẹlu n-type, ologbele-idabobo tabi idinwon wafer fun ise ati ohun elo yàrá. .Eyikeyi sipesifikesonu ti adani jẹ fun ojutu pipe si awọn onibara wa ni agbaye.

Ilana laini	SiC
Òṣuwọn Molikula	40.1
Crystal be	Wurtzite
Ifarahan	ri to
Ojuami Iyo	3103±40K
Ojuami farabale	N/A
Iwuwo ni 300K	3,21 g / cm³
Aafo Agbara	(3.00-3.23) eV
resistivity ojulowo	> 1E5 Ω-cm
Nọmba CAS	409-21-2
Nọmba EC	206-991-8

Rara.	Awọn nkan	Standard Specification
1	Iwọn SiC	2"	3"	4"	6"
2	Opin mm	50.8 0.38	76.2 0.38	100 0.5	150 0.5
3	Ọna idagbasoke	MOCVD	MOCVD	MOCVD	MOCVD
4	Iwa iwa	4H-N, 6H-N, 4H-SI, 6H-SI
5	Resistivity Ω-cm	0.015-0.028;0.02-0.1;>1E5
6	Iṣalaye	0°±0.5°;4.0° si <1120>
7	Sisanra μm	330±25	330±25	(350-500) ± 25	(350-500) ± 25
8	Primary Flat Location	<1-100>±5°	<1-100>±5°	<1-100>±5°	<1-100>±5°
9	Primary Flat Gigun mm	16± 1.7	22.2 ± 3.2	32.5± 2	47.5 ± 2.5
10	Atẹle Flat Location	Ohun alumọni koju soke: 90°, clockwise lati alapin alakoko ± 5.0°
11	Atẹle Flat Gigun mm	8± 1.7	11.2 ± 1.5	18±2	22± 2.5
12	Iye ti o ga julọ ti TTV	15	15	15	15
13	Teriba μm max	40	40	40	40
14	Warp μm max	60	60	60	60
15	Eti iyasoto mm max	1	2	3	3
16	Micropipe iwuwo cm-2	<5, ile-iṣẹ;<15, lab;<50, odi
17	Dislocation cm-2	<3000, ile-iṣẹ;<20000, lab;<500000, odi
18	Dada Roughness nm max	1 (Dandan), 0.5 (CMP)
19	Awọn dojuijako	Ko si, fun ipele ile-iṣẹ
20	Hexagonal farahan	Ko si, fun ipele ile-iṣẹ
21	Scratches	≤3mm, lapapọ ipari kere ju opin sobusitireti
22	Awọn eerun eti	Ko si, fun ipele ile-iṣẹ
23	Iṣakojọpọ	Eiyan wafer ẹyọkan ti edidi ni apo apapo aluminiomu.

Silikoni Carbide SiC 4H / 6Hwafer didara ti o ga julọ jẹ pipe fun iṣelọpọ ti ọpọlọpọ gige-eti ti o ga julọ ni iyara, iwọn otutu giga & awọn ohun elo itanna giga-giga bii Schottky diodes & SBD, MOSFETs & JFETs ti o ni agbara giga, bbl O tun jẹ ohun elo ti o nifẹ ninu iwadi & idagbasoke ti idabobo-bode bipolar transistors ati thyristors.Gẹgẹbi ohun elo semiconducting iran tuntun ti o lapẹẹrẹ, Silicon Carbide SiC wafer tun ṣe iranṣẹ bi itankale ooru to munadoko ni awọn paati LED agbara giga, tabi bi iduroṣinṣin ati sobusitireti olokiki fun dagba Layer GaN ni ojurere ti iṣawari imọ-jinlẹ ti ìfọkànsí ọjọ iwaju.