Indium Arsenide InAs

Apejuwe

Indium arsenide InAs kirisita jẹ semikondokito alapọpọ ti ẹgbẹ III-V ti iṣelọpọ nipasẹ o kere ju 6N 7N Indium mimọ ati ano Arsenic ati kristali kan ti o dagba nipasẹ VGF tabi ilana Liquid Encapsulated Czochralski (LEC), irisi awọ grẹy, awọn kirisita onigun pẹlu ẹya zinc-blende , yo ojuami ti 942 °C.Aafo band arsenide indium jẹ iyipada taara si gallium arsenide, ati iwọn band eewọ jẹ 0.45eV (300K).InAs gara ni o ni ga uniformity ti itanna sile, ibakan latissi, ga elekitironi arinbo ati kekere abawọn iwuwo.Kirisita InAs iyipo ti o dagba nipasẹ VGF tabi LEC le jẹ ege ati iṣelọpọ sinu wafer bi-ge, etched, didan tabi epi-ṣetan fun MBE tabi MOCVD epitaxial idagbasoke.

Awọn ohun elo

Indium arsenide gara wafer jẹ sobusitireti nla fun ṣiṣe awọn ẹrọ Hall ati sensọ aaye oofa fun arinbo gbọngàn giga rẹ ṣugbọn bandgap agbara dín, ohun elo pipe fun ikole ti awọn aṣawari infurarẹẹdi pẹlu iwọn gigun ti 1 – 3.8 µm ti a lo ninu awọn ohun elo agbara giga. ni iwọn otutu yara, bakanna bi awọn lasers super lattice infurarẹẹdi ti aarin, awọn ẹrọ LED infurarẹẹdi aarin-infurarẹẹdi ti iṣelọpọ fun iwọn gigun gigun 2-14 μm rẹ.Pẹlupẹlu, InAs jẹ sobusitireti pipe lati ṣe atilẹyin siwaju si awọn InGaAs orisirisi, InAsSb, InAsPSb & InNAsSb tabi AlGaSb super lattice be be be lo.

Ibeere ni bayi

Awọn alaye

Awọn afi

Imọ Specification

Indium Arsenide

InAs

Indium Arsenide Crystal Waferjẹ sobusitireti nla fun ṣiṣe awọn ẹrọ Hall ati sensọ aaye oofa fun arinbo alabagbepo giga julọ ṣugbọn bandgap agbara dín, ohun elo ti o dara julọ fun ikole ti awọn aṣawari infurarẹẹdi pẹlu iwọn gigun ti 1 – 3.8 µm ti a lo ninu awọn ohun elo agbara giga ni iwọn otutu yara, bakanna bi awọn lasers lattice super lattice infurarẹẹdi aarin wefulenti, agbedemeji awọn ẹrọ LED infurarẹẹdi agbedemeji fun iwọn gigun gigun 2-14 μm rẹ.Pẹlupẹlu, InAs jẹ sobusitireti pipe lati ṣe atilẹyin siwaju si awọn InGaAs orisirisi, InAsSb, InAsPSb & InNAsSb tabi AlGaSb super lattice be be be lo.

Rara.	Awọn nkan	Standard Specification
1	Iwọn	2"	3"	4"
2	Opin mm	50.5 ± 0.5	76.2 ± 0.5	100±0.5
3	Ọna idagbasoke	LEC	LEC	LEC
4	Iwa ihuwasi	P-iru / Zn-doped, N-iru / S-doped, Un-doped
5	Iṣalaye	(100) ± 0,5 °, (111) ± 0,5 °
6	Sisanra μm	500±25	600±25	800±25
7	Iṣalaye Flat mm	16±2	22±2	32±2
8	Idanimọ Flat mm	8±1	11±1	18±1
9	Arinrin cm2/Vs	60-300, ≥2000 tabi bi o ṣe nilo
10	Ti ngbe Ifojusi cm-3	(3-80) E17 tabi ≤5E16
11	Iye ti o ga julọ ti TTV	10	10	10
12	Teriba μm max	10	10	10
13	Warp μm max	15	15	15
14	Dislocation iwuwo cm-2 max	1000	2000	5000
15	Dada Ipari	P/E, P/P	P/E, P/P	P/E, P/P
16	Iṣakojọpọ	Eiyan wafer ẹyọkan ni edidi ninu apo Aluminiomu.

Ilana laini	InAs
Òṣuwọn Molikula	189.74
Crystal be	Zinc parapo
Ifarahan	Grẹy crystalline ri to
Ojuami Iyo	(936-942)°C
Ojuami farabale	N/A
Iwuwo ni 300K	5,67 g / cm³
Aafo Agbara	0,354 eV
Resistivity inu	0.16 Ω-cm
Nọmba CAS	1303-11-3
Nọmba EC	215-115-3

Indium Arsenide InAsni Western Minmetals (SC) Corporation le ti wa ni ipese bi polycrystalline odidi tabi gara nikan bi-ge, etched, didan, tabi epi-setan wafers ni iwọn kan ti 2" 3" ati 4" (50mm, 75mm,100mm) opin, ati p-type, n-type or un-doped conductivity and <111> or <100> Iṣalaye.Sipesifikesonu ti a ṣe adani jẹ fun ojutu pipe si awọn alabara wa ni kariaye.