Gallium Arsenide GaAs

Apejuwe

Gallium ArsenideGAA ni a semikondokito aafo ẹgbẹ taara ti ẹgbẹ III-V ti iṣelọpọ nipasẹ o kere ju 6N 7N gallium giga ti nw ati ohun elo arsenic, ati gara ti o dagba nipasẹ VGF tabi ilana LEC lati mimọ polycrystalline gallium arsenide ti o ga, irisi awọ grẹy, awọn kirisita onigun pẹlu ẹya zinc-balnde.Pẹlu doping ti erogba, silikoni, tellurium tabi zinc lati gba iru n-iru tabi p-type ati adaṣe idabobo ologbele ni atele, kirisita InAs cylindrical kan le ti ge wẹwẹ ati ti a ṣe sinu ofo ati wafer ni bi-ge, etched, didan tabi epi. -setan fun MBE tabi MOCVD epitaxial idagbasoke.Gallium Arsenide wafer jẹ ni akọkọ ti a lo lati ṣe awọn ẹrọ itanna gẹgẹbi awọn diodes ina-emitting infurarẹẹdi, awọn diodes laser, awọn ferese opiti, awọn transistors ipa aaye FETs, laini ti ICs oni-nọmba ati awọn sẹẹli oorun.Awọn paati GaAs wulo ni awọn igbohunsafẹfẹ redio giga-giga ati ohun elo yiyi itanna yiyara, awọn ohun elo imudara ifihan agbara alailagbara.Pẹlupẹlu, Gallium Arsenide sobusitireti jẹ ohun elo pipe fun iṣelọpọ ti awọn paati RF, igbohunsafẹfẹ makirowefu ati awọn ICs monolithic, ati awọn ẹrọ LED ni awọn ibaraẹnisọrọ opiti ati awọn eto iṣakoso fun arinbo alabagbepo saturating, agbara giga ati iduroṣinṣin otutu.

Ifijiṣẹ

Gallium Arsenide GaAs ni Western Minmetals (SC) Corporation le wa ni ipese bi odidi polycrystalline tabi wafer kan garawa ni bi-ge, etched, didan, tabi awọn wafers ti o ti ṣetan ni iwọn 2” 3” 4” ati 6” (50mm, 75mm, 100mm, 150mm) iwọn ila opin, pẹlu p-type, n-type tabi ologbele-insulating conductivity, ati <111> tabi <100> Iṣalaye.Sipesifikesonu ti a ṣe adani jẹ fun ojutu pipe si awọn alabara wa ni kariaye.

Ibeere ni bayi

Awọn alaye

Awọn afi

Imọ Specification

Gallium Arsenide

GAA

Gallium Arsenide GaAswafers ni akọkọ lo lati ṣe awọn ẹrọ itanna gẹgẹbi awọn diodes ina-emitting infurarẹẹdi, awọn diodes laser, awọn ferese opiti, awọn transistors ipa aaye FETs, laini ti ICs oni-nọmba ati awọn sẹẹli oorun.Awọn paati GaAs wulo ni awọn igbohunsafẹfẹ redio giga-giga ati ohun elo yiyi itanna yiyara, awọn ohun elo imudara ifihan agbara alailagbara.Pẹlupẹlu, Gallium Arsenide sobusitireti jẹ ohun elo pipe fun iṣelọpọ ti awọn paati RF, igbohunsafẹfẹ makirowefu ati awọn ICs monolithic, ati awọn ẹrọ LED ni awọn ibaraẹnisọrọ opiti ati awọn eto iṣakoso fun arinbo alabagbepo saturating, agbara giga ati iduroṣinṣin otutu.

Rara.	Awọn nkan	Standard Specification
1	Iwọn	2"	3"	4"	6"
2	Opin mm	50.8 ± 0.3	76.2 ± 0.3	100±0.5	150± 0.5
3	Ọna idagbasoke	VGF	VGF	VGF	VGF
4	Iwa iwa	N-Iru/Si tabi Te-doped, P-Iru/Zn-doped, Semi-Insulating/Ai-doped
5	Iṣalaye	(100) ± 0,5 °	(100) ± 0,5 °	(100) ± 0,5 °	(100) ± 0,5 °
6	Sisanra μm	350±25	625±25	625±25	650±25
7	Iṣalaye Flat mm	17±1	22±1	32±1	Ogbontarigi
8	Idanimọ Flat mm	7±1	12±1	18±1	-
9	Resistivity Ω-cm	(1-9)E (-3) fun p-type tabi n-type, (1-10) E8 fun idabobo ologbele
10	Arinrin cm2/la	50-120 fun p-type, (1-2.5) E3 fun n-type, ≥4000 fun ologbele-idabobo
11	Ti ngbe Ifojusi cm-3	(5-50)E18 fun iru p, (0.8-4)E18 fun n-iru
12	Iye ti o ga julọ ti TTV	10	10	10	10
13	Teriba μm max	30	30	30	30
14	Warp μm max	30	30	30	30
15	EPD cm-2	5000	5000	5000	5000
16	Dada Ipari	P/E, P/P	P/E, P/P	P/E, P/P	P/E, P/P
17	Iṣakojọpọ	Eiyan wafer ẹyọkan ti edidi ni apo apapo aluminiomu.
18	Awọn akiyesi	Mechanical ite GaAs wafer jẹ tun wa lori ìbéèrè.

Ilana laini	GAA
Òṣuwọn Molikula	144.64
Crystal be	Zinc parapo
Ifarahan	Grẹy crystalline ri to
Ojuami Iyo	1400°C, 2550°F
Ojuami farabale	N/A
Iwuwo ni 300K	5,32 g/cm³
Aafo Agbara	1.424 eV
resistivity ojulowo	3.3E8 Ω-cm
Nọmba CAS	1303-00-0
Nọmba EC	215-114-8

Gallium Arsenide GaAsni Western Minmetals (SC) Ajọ le ti wa ni ipese bi polycrystalline odidi tabi apọn gara kan ni bi-ge, etched, didan, tabi epi-setan wafers ni iwọn 2” 3” 4” ati 6” (50mm, 75mm, 100mm , 150mm) iwọn ila opin, pẹlu p-type, n-type or semi-insulating conductivity, ati <111> tabi <100> Iṣalaye.Sipesifikesonu ti a ṣe adani jẹ fun ojutu pipe si awọn alabara wa ni kariaye.