Gallium phosphide gaP

Apejuwe

Gallium phosphide GaP, semikondokito pataki ti awọn ohun-ini itanna alailẹgbẹ gẹgẹbi awọn ohun elo idapọmọra III-V miiran, awọn crystallizes ninu eto onigun kubiki ZB ti o ni iwọn otutu, jẹ ohun elo okuta-osan-ofeefee semitransparent pẹlu aafo ẹgbẹ aiṣe-taara ti 2.26 eV (300K), eyiti o jẹ ti a ṣepọ lati 6N 7N gallium giga ti nw ati irawọ owurọ, ati pe o dagba si okuta kan nipasẹ Liquid Encapsulated Czochralski (LEC) ilana.Gallium phosphide crystal jẹ sulfur doped tabi tellurium lati gba iru semikondokito, ati zinc doped bi p-type conductivity fun iṣelọpọ siwaju sinu wafer ti o fẹ, eyiti o ni awọn ohun elo ni eto opiti, itanna ati awọn ẹrọ optoelectronics miiran.Kekeke Crystal GaP wafer le ṣe imurasilẹ Epi-Ṣetan fun LPE rẹ, MOCVD ati ohun elo epitaxial MBE.Didara giga giga Gallium phosphide GaP wafer p-type, n-type or undoped conductivity at Western Minmetals (SC) Corporation ni a le funni ni iwọn 2 ″ ati 3” (50mm, 75mm diamita), Iṣalaye <100>,<111 > pẹlu dada pari ti bi-ge, didan tabi epi-setan ilana.

Awọn ohun elo

Pẹlu lọwọlọwọ kekere ati ṣiṣe giga ni itusilẹ ina, Gallium phosphide GaP wafer jẹ o dara fun awọn eto ifihan opitika bi pupa ti o ni idiyele kekere, osan, ati awọn diodes ina alawọ ewe (Awọn LED) ati ina ẹhin ti ofeefee ati alawọ ewe LCD ati be be lo ati iṣelọpọ awọn eerun LED pẹlu Imọlẹ kekere si alabọde, GaP tun gba ni ibigbogbo bi sobusitireti ipilẹ fun awọn sensọ infurarẹẹdi ati iṣelọpọ awọn kamẹra ibojuwo.

Ibeere ni bayi

Awọn alaye

Awọn afi

Imọ Specification

Gallium phosphide gaP

Didara giga giga Gallium Phosphide GaP wafer tabi sobusitireti p-iru, n-type tabi iṣiṣẹ aibikita ni Western Minmetals (SC) Corporation le funni ni iwọn 2 ″ ati 3” (50mm, 75mm) ni iwọn ila opin, iṣalaye <100> , <111> pẹlu dada ti pari ti bi-ge, lapped, etched, didan, epi-setan ni ilọsiwaju ni eiyan wafer ẹyọkan ti a fi sinu apo apopọ aluminiomu tabi bi sipesifikesonu adani si ojutu pipe.

Rara.	Awọn nkan	Standard Specification
1	Iwọn GaP	2"
2	Opin mm	50,8 ± 0,5
3	Ọna idagbasoke	LEC
4	Iwa iwa	P-type/Zn-doped, N-type/(S, Si, Te) -doped, Un-doped
5	Iṣalaye	<1 1 1> ± 0.5°
6	Sisanra μm	(300-400) ± 20
7	Resistivity Ω-cm	0.003-0.3
8	Flat Iṣalaye (OF) mm	16±1
9	Identification Flat (IF) mm	8±1
10	Hall arinbo cm2/Vs min	100
11	Ti ngbe Ifojusi cm^-3	(2-20) E17
12	Dislocation iwuwo cm^-2o pọju	2.00E +05
13	Dada Ipari	P/E, P/P
14	Iṣakojọpọ	Eiyan wafer ẹyọkan ti edidi ni apo apapo aluminiomu, apoti paali ni ita

Ilana laini	GAP
Òṣuwọn Molikula	100.7
Crystal be	Zinc parapo
Irisi	Orange ri to
Ojuami Iyo	N/A
Ojuami farabale	N/A
Iwuwo ni 300K	4,14 g/cm³
Aafo Agbara	2.26 eV
resistivity ojulowo	N/A
Nọmba CAS	12063-98-8
Nọmba EC	235-057-2

Gallium Phosphide GaP Wafer, pẹlu kekere lọwọlọwọ ati ṣiṣe giga ni ina ti njade, o dara fun awọn eto ifihan opiti bi pupa-owo kekere, osan, ati awọn diodes ina-emitting alawọ ewe (Awọn LED) ati ina ẹhin ti ofeefee ati alawọ ewe LCD ati bẹbẹ lọ ati iṣelọpọ awọn eerun LED pẹlu kekere si alabọde Imọlẹ, GaP tun gba ni ibigbogbo bi sobusitireti ipilẹ fun awọn sensọ infurarẹẹdi ati iṣelọpọ awọn kamẹra ibojuwo.