Indium Phosphide InP

Apejuwe

Indium Phosphide InP,CAS No.22398-80-7, yo ojuami 1600 °C, alakomeji yellow semikondokito ti idile III-V, a oju-ti dojukọ cubic "zinc blende" crystal be, ti o jọmọ si julọ ti III-V semikondokito, ti wa ni sise lati 6N 7N indium giga ti nw ati irawọ owurọ, ati pe o dagba si okuta momọ nipasẹ LEC tabi ilana VGF.Indium Phosphide gara ti wa ni doped lati jẹ n-type, p-type tabi ologbele-insulating conductivity fun iṣelọpọ wafer siwaju si 6 ″ (150 mm) opin, eyiti o ṣe ẹya aafo ẹgbẹ taara rẹ, iṣipopada giga giga ti awọn elekitironi ati awọn ihò ati igbona daradara daradara. ifarakanra.Indium Phosphide InP Wafer prime tabi ipele idanwo ni Western Minmetals (SC) Corporation ni a le funni pẹlu iru p-type, n-type and semi-insulating conductivity in the size of 2"3" 4" ati 6"(to 150mm) opin, iṣalaye <111> tabi <100> ati sisanra 350-625um pẹlu dada pari ti etched ati didan tabi Epi-setan ilana.Nibayi Indium Phosphide Single Crystal ingot 2-6 ″ wa lori ibeere.Polycrystalline Indium Phosphide InP tabi Multi-crystal InP ingot ni iwọn D(60-75) x Gigun (180-400) mm ti 2.5-6.0kg pẹlu ifọkansi ti ngbe ti o kere ju 6E15 tabi 6E15-3E16 tun wa.Eyikeyi sipesifikesonu adani ti o wa lori ibeere lati ṣaṣeyọri ojutu pipe.

Awọn ohun elo

Indium Phosphide InP wafer jẹ lilo pupọ fun iṣelọpọ awọn paati optoelectronic, agbara-giga ati awọn ẹrọ itanna igbohunsafẹfẹ-giga, bi sobusitireti fun epitaxial indium-gallium-arsenide (InGaAs) ti o da lori awọn ẹrọ itanna opto-itanna.Indium Phosphide tun wa ninu iṣelọpọ fun awọn orisun ina ti o ni ileri pupọ ni awọn ibaraẹnisọrọ okun opiti, awọn ẹrọ orisun agbara makirowefu, awọn amplifiers makirowefu ati awọn ẹrọ FETs ẹnu-ọna, awọn modulators iyara-giga ati awọn oniwadi fọto, ati satẹlaiti lilọ kiri ati bẹbẹ lọ.

Ibeere ni bayi

Awọn alaye

Awọn afi

Imọ Specification

Indium Phosphide InP

Indium phosphide Nikan CrystalWafer (InP gara ingot tabi Wafer) ni Western Minmetals (SC) Corporation ni a le funni pẹlu iru p-iru, n-type ati adaṣe idabobo ologbele ni iwọn 2” 3” 4” ati 6”(to 150mm) iwọn ila opin, iṣalaye <111> tabi <100> ati sisanra 350-625um pẹlu dada pari ti etched ati didan tabi Epi-setan ilana.

Indium Phosphide Polycrystallinetabi Multi-Crystal ingot (InP poly ingot) ni iwọn D (60-75) x L (180-400) mm ti 2.5-6.0kg pẹlu ifọkansi ti ngbe ti o kere ju 6E15 tabi 6E15-3E16 wa.Eyikeyi sipesifikesonu adani ti o wa lori ibeere lati ṣaṣeyọri ojutu pipe.

Rara.	Awọn nkan	Standard Specification
1	Indium phosphide Nikan Crystal	2"	3"	4"
2	Opin mm	50.8 ± 0.5	76.2 ± 0.5	100±0.5
3	Ọna idagbasoke	VGF	VGF	VGF
4	Iwa ihuwasi	P/Zn-doped, N/(S-doped tabi un-doped), Ologbele-idabobo
5	Iṣalaye	(100) ± 0,5 °, (111) ± 0,5 °
6	Sisanra μm	350±25	600±25	600±25
7	Iṣalaye Flat mm	16±2	22±1	32.5± 1
8	Idanimọ Flat mm	8±1	11±1	18±1
9	Arinrin cm2/Vs	50-70,> 2000, (1.5-4) E3
10	Ti ngbe Ifojusi cm-3	(0.6-6) E18, ≤3E16
11	Iye ti o ga julọ ti TTV	10	10	10
12	Teriba μm max	10	10	10
13	Warp μm max	15	15	15
14	Dislocation iwuwo cm-2 max	500	1000	2000
15	Dada Ipari	P/E, P/P	P/E, P/P	P/E, P/P
16	Iṣakojọpọ	Eiyan wafer ẹyọkan ti edidi ni apo apapo aluminiomu.

Rara.	Awọn nkan	Standard Specification
1	Indium Phosphide Ingot	Poly-Crystalline tabi Multi-Crystal Ingot
2	Crystal Iwon	D (60-75) x L (180-400) mm
3	Iwọn fun Crystal Ingot	2.5-6.0Kg
4	Arinkiri	≥3500 cm²/VS
5	Ifojusi ti ngbe	≤6E15, tabi 6E15-3E16 cm^-3
6	Iṣakojọpọ	Ingot gara InP kọọkan wa ninu apo ṣiṣu ti a fi edidi, 2-3 ingots ninu apoti paali kan.

Ilana laini	InP
Òṣuwọn Molikula	145.79
Crystal be	Zinc parapo
Ifarahan	Crystalline
Ojuami Iyo	1062°C
Ojuami farabale	N/A
Iwuwo ni 300K	4,81 g / cm³
Aafo Agbara	1.344 eV
resistivity ojulowo	8.6E7 Ω-cm
Nọmba CAS	22398-80-7
Nọmba EC	244-959-5

Indium Phosphide InP Waferti wa ni lilo pupọ fun iṣelọpọ awọn paati optoelectronic, agbara-giga ati awọn ẹrọ itanna igbohunsafẹfẹ giga, bi sobusitireti fun indium-gallium-arsenide (InGaAs) ti o da lori awọn ẹrọ itanna opto-itanna.Indium Phosphide tun wa ninu iṣelọpọ fun awọn orisun ina ti o ni ileri pupọ ni awọn ibaraẹnisọrọ okun opiti, awọn ẹrọ orisun agbara makirowefu, awọn amplifiers makirowefu ati awọn ẹrọ FETs ẹnu-ọna, awọn modulators iyara-giga ati awọn oniwadi fọto, ati satẹlaiti lilọ kiri ati bẹbẹ lọ.