Apejuwe
Gallium Nitride GaN, CAS 25617-97-4, molikula ibi-83.73, wurtzite gara be, ni a alakomeji yellow taara band-aafo semikondokito ti ẹgbẹ III-V dagba nipa a gíga ni idagbasoke ammonothermal ilana ilana.Ti a ṣe afihan nipasẹ didara kirisita pipe, adaṣe igbona giga, arinbo elekitironi giga, aaye ina mọnamọna to gaju ati bandgap jakejado, Gallium Nitride GaN ni awọn abuda ti o nifẹ ninu optoelectronics ati awọn ohun elo oye.
Awọn ohun elo
Gallium Nitride GaN jẹ o dara fun iṣelọpọ ti gige-eti iyara giga ati agbara giga ti o ni imọlẹ ina-emitting diodes Awọn ohun elo LED, lesa ati awọn ẹrọ optoelectronics bii alawọ ewe ati awọn lesa bulu, awọn transistors arinbo elekitironi giga (HEMTs) awọn ọja ati ni agbara giga. ati ile-iṣẹ iṣelọpọ awọn ẹrọ iwọn otutu giga.
Ifijiṣẹ
Gallium Nitride GaN ni Western Minmetals (SC) Corporation ni a le pese ni iwọn wafer 2 inch” tabi 4” (50mm, 100mm) ati wafer square 10 × 10 tabi 10 × 5 mm.Eyikeyi iwọn ti adani ati sipesifikesonu wa fun ojutu pipe si awọn alabara wa ni kariaye.
Imọ Specification
Rara. | Awọn nkan | Standard Specification | ||
1 | Apẹrẹ | Yiyipo | Yiyipo | Onigun mẹrin |
2 | Iwọn | 2" | 4" | -- |
3 | Opin mm | 50.8 ± 0.5 | 100±0.5 | -- |
4 | Ẹgbẹ Ipari mm | -- | -- | 10x10 tabi 10x5 |
5 | Ọna idagbasoke | HVPE | HVPE | HVPE |
6 | Iṣalaye | C-ofurufu (0001) | C-ofurufu (0001) | C-ofurufu (0001) |
7 | Iwa iwa | N-iru / Si-doped, Un-doped, Ologbele-idabobo | ||
8 | Resistivity Ω-cm | <0.1, <0.05,>1E6 | ||
9 | Sisanra μm | 350±25 | 350±25 | 350±25 |
10 | Iye ti o ga julọ ti TTV | 15 | 15 | 15 |
11 | Teriba μm max | 20 | 20 | 20 |
12 | EPD cm-2 | <5E8 | <5E8 | <5E8 |
13 | Dada Ipari | P/E, P/P | P/E, P/P | P/E, P/P |
14 | Dada Roughness | Iwaju: ≤0.2nm, Pada: 0.5-1.5μm tabi ≤0.2nm | ||
15 | Iṣakojọpọ | Eiyan wafer ẹyọkan ni edidi ninu apo Aluminiomu. |
Ilana laini | GAN |
Òṣuwọn Molikula | 83.73 |
Crystal be | Sinkii idapọmọra / Wurtzite |
Ifarahan | Translucent ri to |
Ojuami Iyo | 2500 °C |
Ojuami farabale | N/A |
Iwuwo ni 300K | 6,15 g/cm3 |
Aafo Agbara | (3.2-3.29) eV ni 300K |
resistivity ojulowo | > 1E8 Ω-cm |
Nọmba CAS | 25617-97-4 |
Nọmba EC | 247-129-0 |
Gallium Nitride GaNjẹ o dara fun iṣelọpọ ti gige-eti iyara giga ati agbara giga imọlẹ ina-emitting diodes Awọn ohun elo LED, lesa ati awọn ẹrọ optoelectronics bii alawọ ewe ati awọn laser bulu, awọn transistors arinbo elekitironi giga (HEMTs) ati ni agbara giga ati giga- ile-iṣẹ iṣelọpọ awọn ẹrọ otutu.
Awọn imọran rira
Gallium Nitride GaN