Apejuwe
Gallium Antimonide GaSb, semikondokito ti ẹgbẹ III-V agbo pẹlu zinc-blende lattice be, ti wa ni sise nipasẹ 6N 7N gallium giga ti o ga julọ ati awọn eroja antimony, ati pe o dagba si gara nipasẹ ọna LEC lati ọna polycrystalline tio tutunini tabi ọna VGF pẹlu EPD <1000cm-3.Wafer GaSb le jẹ ti ge wẹwẹ sinu ati iṣelọpọ lẹhinna lati ingot crystalline kan pẹlu iṣọkan giga ti awọn aye itanna, awọn ẹya alailẹgbẹ ati igbagbogbo, ati iwuwo abawọn kekere, atọka itọka ti o ga julọ ju awọn agbo ogun miiran ti kii ṣe irin.GaSb le ni ilọsiwaju pẹlu yiyan jakejado ni deede tabi pipa iṣalaye, kekere tabi idojukọ doped giga, ipari dada ti o dara ati fun idagbasoke Epitaxial MBE tabi MOCVD.Gallium Antimonide sobusitireti ti wa ni lilo ni iwọn-gige-eti Fọto-opitiki ati awọn ohun elo optoelectronic gẹgẹbi awọn iṣelọpọ ti awọn aṣawari fọto, awọn aṣawari infurarẹẹdi pẹlu igbesi aye gigun, ifamọ giga ati igbẹkẹle, paati photoresist, Awọn LED infurarẹẹdi ati awọn lasers, transistors, sẹẹli fọtovoltaic gbona gbona ati thermo-photovoltaic awọn ọna šiše.
Ifijiṣẹ
Gallium Antimonide GaSb ni Western Minmetals (SC) Corporation ni a le funni pẹlu iru n-type, p-type and undoped semi-insulating conductivity in size of 2" 3" ati 4" (50mm, 75mm, 100mm) iwọn ila opin, iṣalaye <111> tabi <100>, ati pẹlu wafer dada pari ti bi-ge, etched, didan tabi ga didara epitaxy setan pari.Gbogbo awọn ege jẹ akọwe lesa kọọkan fun idanimọ.Nibayi, polycrystalline gallium antimonide GaSb lump tun jẹ adani lori ibeere si ojutu pipe.
Imọ Specification
Gallium Antimonide GaSbA nlo sobusitireti ni oju-igi-gige-eti julọ ati awọn ohun elo optoelectronic gẹgẹbi awọn iṣelọpọ ti awọn aṣawari fọto, awọn aṣawari infurarẹẹdi pẹlu igbesi aye gigun, ifamọ giga ati igbẹkẹle, paati photoresist, Awọn LED infurarẹẹdi ati awọn lasers, awọn transistors, sẹẹli fọtovoltaic gbona ati iwọn otutu. -photovoltaic awọn ọna šiše.
Awọn nkan | Standard Specification | |||
1 | Iwọn | 2" | 3" | 4" |
2 | Opin mm | 50.5 ± 0.5 | 76.2 ± 0.5 | 100±0.5 |
3 | Ọna idagbasoke | LEC | LEC | LEC |
4 | Iwa ihuwasi | P-iru / Zn-doped, Un-doped, N-iru / Te-doped | ||
5 | Iṣalaye | (100) ± 0,5 °, (111) ± 0,5 ° | ||
6 | Sisanra μm | 500±25 | 600±25 | 800±25 |
7 | Iṣalaye Flat mm | 16±2 | 22±1 | 32.5± 1 |
8 | Idanimọ Flat mm | 8±1 | 11±1 | 18±1 |
9 | Arinrin cm2/Vs | 200-3500 tabi bi beere | ||
10 | Ti ngbe Ifojusi cm-3 | (1-100) E17 tabi bi beere | ||
11 | Iye ti o ga julọ ti TTV | 15 | 15 | 15 |
12 | Teriba μm max | 15 | 15 | 15 |
13 | Warp μm max | 20 | 20 | 20 |
14 | Dislocation iwuwo cm-2 max | 500 | 1000 | 2000 |
15 | Dada Ipari | P/E, P/P | P/E, P/P | P/E, P/P |
16 | Iṣakojọpọ | Eiyan wafer ẹyọkan ni edidi ninu apo Aluminiomu. |
Ilana laini | GaSb |
Òṣuwọn Molikula | 191.48 |
Crystal be | Zinc parapo |
Ifarahan | Grẹy crystalline ri to |
Ojuami Iyo | 710°C |
Ojuami farabale | N/A |
Iwuwo ni 300K | 5,61 g/cm3 |
Aafo Agbara | 0,726 eV |
resistivity ojulowo | 1E3 Ω-cm |
Nọmba CAS | 12064-03-8 |
Nọmba EC | 235-058-8 |
Gallium Antimonide GaSbni Western Minmetals (SC) Corporation ni a le funni pẹlu iru n-iru, p-type ati aiṣedeede idabobo ologbele-ipin ni iwọn 2” 3” ati 4” (50mm, 75mm, 100mm) iwọn ila opin, iṣalaye <111> tabi <100 >, ati pẹlu wafer dada ipari ti bi-ge, etched, didan tabi didara ga didara epitaxy setan pari.Gbogbo awọn ege jẹ akọwe lesa kọọkan fun idanimọ.Nibayi, polycrystalline gallium antimonide GaSb lump tun jẹ adani lori ibeere si ojutu pipe.
Awọn imọran rira
Gallium Antimonide GaSb