FZ NTD ohun alumọni wafer

Apejuwe

FZ-NTD ohun alumọni wafer, mọ bi Foat-Zone Neutron Transmutation Doped Silicon Wafer.Atẹgun-free, ga ti nw ati ki o ga resistivity ohun alumọni le ti wa ni gba by agbegbe leefofo FZ (Agbegbe-Lilefoofo) idagba gara, High resistivity FZ ohun alumọni gara ti wa ni igba doped nipa Neutron Transmutation Doping (NTD) ilana, ninu eyi ti neutroni itanna on undoped leefofo agbegbe ohun alumọni lati ṣe silikoni isotopes idẹkùn pẹlu neutroni ati ki o si ibajẹ sinu awọn dopants ti o fẹ lati se aseyori awọn doping ibi-afẹde.Nipasẹ ṣiṣatunṣe ipele ti itanna neutroni, resistivity le yipada laisi iṣafihan awọn dopants ita ati nitorinaa ṣe iṣeduro mimọ ohun elo.FZ NTD ohun alumọni wafers (Poat Zone Neutron Transmutation Doping Silicon) ni awọn ohun-ini imọ-ẹrọ Ere ti ifọkansi doping aṣọ ati pinpin radial resistivity aṣọ, awọn ipele aimọ ti o kere julọ,ati ki o ga nkan ti ngbe s'aiye.

Ifijiṣẹ

Gẹgẹbi olutaja ọja ti ohun alumọni NTD fun awọn ohun elo agbara ti o ni ileri, ati atẹle awọn ibeere ti ndagba fun awọn wafers ipele didara oke, FZ NTD ohun alumọni ohun alumọni ti o ga julọni Western Minmetals (SC) Corporation le ṣe funni si awọn alabara wa ni kariaye ni iwọn oriṣiriṣi lati 2 ″, 3″, 4″, 5″ ati 6 ″ iwọn ila opin (50mm, 75mm, 100mm, 125mm ati 150mm) ati ọpọlọpọ awọn resistivity 5 si 2000 ohm.cm ni <1-1-1>, <1-1-0>, <1-0-0> awọn itọnisọna pẹlu bi-ge, lapped, etched ati didan dada pari ni package ti apoti foomu tabi kasẹti , tabi bi adani sipesifikesonu si awọn pipe ojutu.

Ibeere ni bayi

Awọn alaye

Awọn afi

Imọ Specification

FZ NTD ohun alumọni wafer

Gẹgẹbi olutaja ọja ti ohun alumọni FZ NTD fun awọn ohun elo agbara ti o ni ileri, ati atẹle awọn ibeere ti ndagba fun awọn wafers ipele didara oke, FZ NTD silikoni wafer ti o ga julọ ni Western Minmetals (SC) Corporation ni a le funni si awọn alabara wa ni kariaye ni iwọn pupọ lati 2 ″ si 6″ ni iwọn ila opin (50, 75, 100, 125 ati 150mm) ati iwọn pupọ ti resistivity 5 si 2000 ohm-cm ni <1-1-1>, <1-1-0>, <1-0- 0> awọn iṣalaye pẹlu lapped, etched ati didan dada pari ni package ti apoti foomu tabi kasẹti, apoti paali ni ita tabi bi sipesifikesonu adani si ojutu pipe.

Rara.	Awọn nkan	Standard Specification
1	Iwọn	2"	3"	4"	5"	6"
2	Iwọn opin	50.8 ± 0.3	76.2 ± 0.3	100±0.5	125± 0.5	150± 0.5
3	Iwa ihuwasi	n-iru	n-iru	n-iru	n-iru	n-iru
4	Iṣalaye	<100>, <111>, <110>
5	Sisanra μm	279, 381, 425, 525, 575, 625, 675, 725 tabi bi o ti beere fun
6	Resistivity Ω-cm	36-44, 44-52, 90-110, 100-250, 200-400 tabi bi o ti beere
7	Iye ti o ga julọ ti RRV	8%, 10%, 12%
8	Iye ti o ga julọ ti TTV	10	10	10	10	10
9	Teriba/Warp μm max	30	30	30	30	30
10	Ti ngbe Igbesi aye μs	> 200, > 300, > 400 tabi bi o ṣe nilo
11	Dada Ipari	Bi-ge, Lapped, didan
12	Iṣakojọpọ	Foomu apoti inu, apoti paali ita.

Ipilẹ Ohun elo Paramita

Aami	Si
Nọmba Atomiki	14
Iwọn Atomiki	28.09
Ẹka eroja	Metalloid
Ẹgbẹ, Akoko, Àkọsílẹ	14, 3, P
Crystal be	Diamond
Àwọ̀	Grẹy dudu
Ojuami Iyo	1414°C, 1687.15 K
Ojuami farabale	3265°C, 3538.15 K
Iwuwo ni 300K	2.329 g / cm³
resistivity ojulowo	3.2E5 Ω-cm
Nọmba CAS	7440-21-3
Nọmba EC	231-130-8

FZ-NTD ohun alumọni waferjẹ pataki pataki fun awọn ohun elo ni agbara giga, awọn imọ-ẹrọ aṣawari ati ni awọn ẹrọ semikondokito ti o ni lati ṣiṣẹ ni awọn ipo to gaju tabi nibiti o nilo iyatọ resistance kekere kọja wafer, gẹgẹbi ẹnu-ọna-pa thyristor GTO, induction static thyristor SITH, omiran transistor GTR, insulate-gate bipolar transistor IGBT, afikun HV diode PIN.FZ NTD n-type silicon wafer tun jẹ ohun elo iṣẹ akọkọ fun ọpọlọpọ awọn oluyipada igbohunsafẹfẹ, awọn atunṣe, awọn eroja iṣakoso agbara nla, awọn ẹrọ itanna agbara titun, awọn ẹrọ fọtoelectronic, ohun alumọni SR, SCR iṣakoso ohun alumọni, ati awọn paati opiti gẹgẹbi awọn lẹnsi ati awọn window. fun awọn ohun elo terahertz.