Apejuwe
Epitaxial Silicon Wafertabi EPI Silicon Wafer, jẹ wafer ti semiconducting crystal Layer ti a fi silẹ sori ilẹ gara didan ti sobusitireti ohun alumọni nipasẹ idagba epitaxial.Layer epitaxial le jẹ ohun elo kanna bi sobusitireti nipasẹ idagbasoke epitaxial isokan, tabi Layer nla kan pẹlu didara iwulo kan pato nipasẹ idagbasoke epitaxial orisirisi, eyiti o gba imọ-ẹrọ idagbasoke epitaxial pẹlu ifasilẹ orule kemikali CVD, ipele olomi epitaxy LPE, ati tan ina molikula. Epitaxy MBE lati ṣaṣeyọri didara ti o ga julọ ti iwuwo abawọn kekere ati aibikita dada ti o dara.Silicon Epitaxial Wafers ni a lo nipataki ni iṣelọpọ ti awọn ẹrọ semikondokito ti ilọsiwaju, awọn eroja semikondokito ICs ti o ga julọ, ọtọtọ ati awọn ẹrọ agbara, tun lo fun ipin diode ati transistor tabi sobusitireti fun IC gẹgẹbi iru bipolar, MOS ati awọn ẹrọ BiCMOS.Siwaju si, ọpọ Layer epitaxial ati fiimu nipọn EPI silikoni wafers ti wa ni igba lo ninu microelectronics, photonics ati photovoltaics ohun elo.
Ifijiṣẹ
Epitaxial Silicon Wafers tabi EPI Silicon Wafer ni Western Minmetals (SC) Corporation le funni ni iwọn 4, 5 ati 6 inch (100mm, 125mm, 150mm diamita), pẹlu iṣalaye <100>, <111>, epilayer resistivity of <1ohm -cm tabi soke to 150ohm-cm, ati epilayer sisanra ti <1um tabi soke si 150um, lati ni itẹlọrun awọn orisirisi awọn ibeere ni dada pari ti etched tabi LTO itọju, aba ti ni kasẹti pẹlu paali apoti ita, tabi bi adani sipesifikesonu si awọn pipe ojutu .
Imọ Specification
Epitaxial Silicon Waferstabi EPI Silicon Wafer ni Western Minmetals (SC) Corporation le funni ni iwọn 4, 5 ati 6 inch (100mm, 125mm, 150mm diamita), pẹlu iṣalaye <100>, <111>, resistivity epilayer ti <1ohm-cm tabi to 150ohm-cm, ati sisanra epilayer ti <1um tabi to 150um, lati ni itẹlọrun awọn ibeere oriṣiriṣi ni ipari dada ti etched tabi itọju LTO, ti o wa ninu kasẹti pẹlu apoti paali ni ita, tabi bi iyasọtọ ti adani si ojutu pipe.
Aami | Si |
Nọmba Atomiki | 14 |
Iwọn Atomiki | 28.09 |
Ẹka eroja | Metalloid |
Ẹgbẹ, Akoko, Àkọsílẹ | 14, 3, P |
Crystal be | Diamond |
Àwọ̀ | Grẹy dudu |
Ojuami Iyo | 1414°C, 1687.15 K |
Ojuami farabale | 3265°C, 3538.15 K |
Iwuwo ni 300K | 2.329 g / cm3 |
resistivity ojulowo | 3.2E5 Ω-cm |
Nọmba CAS | 7440-21-3 |
Nọmba EC | 231-130-8 |
Rara. | Awọn nkan | Standard Specification | ||
1 | Gbogbogbo Abuda | |||
1-1 | Iwọn | 4" | 5" | 6" |
1-2 | Opin mm | 100±0.5 | 125± 0.5 | 150± 0.5 |
1-3 | Iṣalaye | <100>, <111> | <100>, <111> | <100>, <111> |
2 | Epitaxial Layer Abuda | |||
2-1 | Ọna idagbasoke | CVD | CVD | CVD |
2-2 | Iwa iwa | P tabi P+, N/ tabi N+ | P tabi P+, N/ tabi N+ | P tabi P+, N/ tabi N+ |
2-3 | Sisanra μm | 2.5-120 | 2.5-120 | 2.5-120 |
2-4 | Isokan Sisanra | ≤3% | ≤3% | ≤3% |
2-5 | Resistivity Ω-cm | 0.1-50 | 0.1-50 | 0.1-50 |
2-6 | Resistivity Iṣọkan | ≤3% | ≤5% | - |
2-7 | Dislocation cm-2 | <10 | <10 | <10 |
2-8 | Dada Didara | Ko si ërún, owusuwusu tabi osan Peeli ku, ati be be lo. | ||
3 | Mu sobusitireti Abuda | |||
3-1 | Ọna idagbasoke | CZ | CZ | CZ |
3-2 | Iwa iwa | P/N | P/N | P/N |
3-3 | Sisanra μm | 525-675 | 525-675 | 525-675 |
3-4 | Sisanra Iṣọkan max | 3% | 3% | 3% |
3-5 | Resistivity Ω-cm | Bi beere | Bi beere | Bi beere |
3-6 | Resistivity Iṣọkan | 5% | 5% | 5% |
3-7 | Iye ti o ga julọ ti TTV | 10 | 10 | 10 |
3-8 | Teriba μm max | 30 | 30 | 30 |
3-9 | Warp μm max | 30 | 30 | 30 |
3-10 | EPD cm-2 max | 100 | 100 | 100 |
3-11 | Profaili eti | Ti yika | Ti yika | Ti yika |
3-12 | Dada Didara | Ko si ërún, owusuwusu tabi osan Peeli ku, ati be be lo. | ||
3-13 | Pada Side Ipari | Etched tabi LTO (5000± 500Å) | ||
4 | Iṣakojọpọ | Kasẹti inu, apoti paali ita. |
Silikoni Epitaxial WafersNi akọkọ ti a lo ni iṣelọpọ awọn ẹrọ semikondokito to ti ni ilọsiwaju, awọn eroja semikondokito ti irẹpọ pupọ ICs, ọtọ ati awọn ẹrọ agbara, tun lo fun ipin diode ati transistor tabi sobusitireti fun IC gẹgẹbi iru bipolar, MOS ati awọn ẹrọ BiCMOS.Siwaju si, ọpọ Layer epitaxial ati fiimu nipọn EPI silikoni wafers ti wa ni igba lo ninu microelectronics, photonics ati photovoltaics ohun elo.
Awọn imọran rira
Epitaxial Silicon Wafer